Bruker Nano's XFlash 5060 T silicon drift detector (SDD) is designed for demanding applications in X-ray microanalysis and nanoanalysis.
Providing a 60mm2 active area, it is claimed to ensure the optimum solid angle for analysis at low beam currents.
The slender detector end cap and microscope-specific collimator design enable short detector sample distances and provide a high take-off angle without requiring sample tilt.
The analyst can therefore collect spectra with excellent peak-to-background ratio and without the disadvantage of losing the zone axis, according to the company.
Compared with Si(Li) detectors, still commonly used for EDS on TEM, the XFlash 5060 T exhibits faster speed characteristics and lower dead times, providing advantages in collection efficiency, even in low-count-rate situations.
In addition, the XFlash 5060 T can operate with good energy resolution at count rates beyond what a Si(Li) can handle on TEM.
The detector is fully operational at input count rates of up to 750,000cps - an advantage for low-mag high-count-rate STEM mapping.
Also, there is no danger of 'locking up' the spectrometer for minutes when hitting a support grid.
The high sensitivity of the XFlash 5060 T enables the detection of high energy radiation.
Bruker Nano claims that, in combination with advanced signal processing electronics and sophisticated software, reliable quantitative analysis of element peaks at 40kV and higher is possible.
