This low noise detector has a noise equivalent power (NEP) of only 2.5x10^-14 W/OHz in combination with a high shunt resistance of 250MW, (min) and a low dark current of 2.5nA (max) at 5V
AP Technologies announces the international release of Opto Diode's new red-enhanced ODD-3W-2 silicon bi-cell photodiode.
Individual pixels are 2.54x1.22mm (3.1mm) with excellent responsivity of 0.55A/W at 900nm.
The ODD-3W-2 is packaged in an industry-standard TO-5 package with a low-profile flat-window can allowing maximum field-of-view and optimum location of any external optics such as filters.
Opto Diode's ODD-3W-2 is ideal for position-sensing applications, emitter alignment, test-and-measurement and other industrial tasks where single-axis nulling is required.
The ODD-3W-2 is manufactured at Opto Diode's state-of-the-art facility in Newbury Park, California in its Class 1000 cleanroom and high volume fully-automated packaging facility.
