FEI has released the Vion plasma focused ion-beam (PFIB) system that is said to remove material more than 20 times faster than existing FIB technologies.
Faster (20-50x) material removal addresses new markets for FIB-based failure analysis in advanced integrated circuit (IC) packaging applications that use larger-scale structures to connect multiple chips in tightly integrated packages.
The Vion PFIB system's ability to provide site-specific cross-sectional analysis of these new technologies in minutes rather than hours will accelerate process development and reduce time to market for new products.
By combining high-speed milling and deposition with precise control and high-quality imaging, the Vion PFIB system can be used in a variety of critical applications, such as: failure analysis of bumps, wire bonds, through silicon vias (TSVs) and stacked die; site specific removal of package and other materials to enable failure analysis and fault isolation on buried die; circuit and package modifications to test design changes without repeating the fabrication process or creating new masks; process monitoring and development at the package level; and defect analysis of packaged parts and MEMS devices.
While the plasma source of the Vion PFIB system can deliver more than a microamp of current in a well-focused beam, it can still maintain performance at lower currents used for high-precision final cuts and high-resolution (sub-30nm) imaging.
In addition, by introducing various gases, the Vion PFIB system can selectively etch specific materials or deposit patterned conductors and insulators.
The plasma source also offers the potential to use different ion species to enhance performance in specific applications.
