FEI has announced the release of the Tecnai Osiris scanning/transmission electron microscope (S/TEM), delivering high analytical speed and performance.
It includes the company's Chemistem technology, which reduces the time for large field-of-view elemental mapping from hours to minutes.
The Tecnai Osiris is designed to combine this high analytical throughput with ease-of-use to meet the requirements for both high-volume industrial and multi-user research laboratories.
The Chemistem technology enables the Tecnai Osiris to achieve a factor of 50 or more enhancement in speed of energy dispersive X-ray (EDX) elemental mapping, by combining technical advances in beam generation with disruptive changes in EDX signal detection.
The Tecnai Osiris is built on a platform designed to maximise productivity and return-on-investment in high-volume analysis.
Tony Edwards, senior vice-president of market divisions at FEI, said: 'The continuing decrease in device sizes and proliferation of new materials in semiconductor manufacturing, and the appearance of more samples with unknown composition in multi-user research facilities drives the need for an S/TEM providing the ease-of-use of EDX analytics with an elemental mapping speed comparable with STEM imaging.' The Tecnai Osiris, a 200kV S/TEM, includes: Chemistem, which comprises the proprietary X-FEG high-brightness electron source and Super-X, FEI's EDX detection system based on silicon drift detector technology; Multiloader sample handling that reduces thermal equilibration time after sample exchanges by 10 times with improvements in time-to-data; and the FS-1 electron energy loss spectrometer that improves electron energy loss spectrometry speed and sensitivity.
